SI4202DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 38.07 грн |
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Технічний опис SI4202DY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12.1A, Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V, Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4202DY-T1-GE3 за ціною від 28.84 грн до 103.38 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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SI4202DY-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI4202DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12.1 A, 0.0115 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 12.1 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 3.7 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0115 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: No SVHC (15-Jun-2015) |
на замовлення 1003 шт: термін постачання 21-31 дні (днів) |
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SI4202DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.1A Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 3146 шт: термін постачання 21-31 дні (днів) |
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SI4202DY-T1-GE3 | Виробник : Vishay Semiconductors | MOSFET 30V Vds 20V Vgs SO-8 |
на замовлення 7807 шт: термін постачання 21-30 дні (днів) |
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SI4202DY-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 12.1A 8-Pin SOIC N T/R |
товар відсутній |
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SI4202DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; Idm: 50A; 2.6W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 12.1A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A кількість в упаковці: 2500 шт |
товар відсутній |
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SI4202DY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; Idm: 50A; 2.6W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 12.1A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A |
товар відсутній |