PJQ4464AP-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
на замовлення 3169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.36 грн |
| 10+ | 43.03 грн |
| 100+ | 29.79 грн |
| 500+ | 23.36 грн |
| 1000+ | 19.88 грн |
| 2000+ | 17.71 грн |
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Технічний опис PJQ4464AP-AU_R2_000A1 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V, Power Dissipation (Max): 2.4W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V.
Інші пропозиції PJQ4464AP-AU_R2_000A1 за ціною від 16.69 грн до 56.66 грн
| Фото | Назва | Виробник | Інформація |
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PJQ4464AP-AU_R2_000A1 | Виробник : Panjit |
 MOSFET 60V N-Channel Enhancement Mode MOSFET |
на замовлення 4728 шт: термін постачання 21-30 дні (днів) |
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PJQ4464AP-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V Power Dissipation (Max): 2.4W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V |
товар відсутній |