GD450HTX170C7S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Case: C7
кількість в упаковці: 5 шт
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Технічний опис GD450HTX170C7S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 900A, Electrical mounting: Press-in PCB; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Topology: IGBT half-bridge x3; NTC thermistor, Case: C7, кількість в упаковці: 5 шт.

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GD450HTX170C7S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Case: C7
товар відсутній