YQ30NL10SETL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
на замовлення 966 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 141.56 грн |
10+ | 116.02 грн |
100+ | 80.43 грн |
500+ | 67.82 грн |
1000+ | 57.05 грн |
2000+ | 54.87 грн |
5000+ | 53.17 грн |
Відгуки про товар
Написати відгук
Технічний опис YQ30NL10SETL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable.